BJT Transistor / TO126 - 2SB772 B772 PNP Bipolar Junction Transistor

Type and Polarity:

The 2SB772 is a PNP (Positive-Negative-Positive) transistor. This means that it conducts current when the base is driven negative concerning the emitter.

Package Type:

The transistor is typically available in a TO-126 package, which is a small, three-lead package with the collector, base, and emitter pins.

Collector-Base Voltage (Vcb):

The maximum voltage that can be applied between the collector and the base is a parameter called Vcb. For the 2SB772, this voltage is typically around 60 volts.

Collector-Emitter Voltage (Vce):

The maximum voltage that can be applied between the collector and the emitter is a parameter called Vce. The 2SB772 usually has a Vce rating of around 50 volts.

Collector Current (Ic):

This parameter represents the maximum current that can flow through the collector. The 2SB772 is often rated for collector currents in the range of a few amperes.

Hfe (Current Gain):

The current gain, or hfe, specifies the amplification capability of the transistor. The 2SB772 typically has an hfe ranging from 40 to 320.

Applications:

The 2SB772 can be used in various electronic circuits where PNP transistors are required. Common applications include audio amplifier stages, voltage regulators, and other signal amplification circuits.

The 2SB772 is often used in pairs with its complementary NPN transistor, which is the 2SD882. This allows them to work together in push-pull amplifier configurations.